MBE Growth and Characterization of Sn1-xEuxTe
Epilayers of Sn1¡xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleavedBaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknessesof epilayers were about 1.5 ¹m and deposition was carried out at growth temperatures of 300 oC....
Gorde:
| Argitaratua izan da: | Brazilian Journal of Physics |
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| Egile Nagusiak: | , , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sociedade Brasileira de Física
2004
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| Gaiak: | |
| Sarrera elektronikoa: | https://www.redalyc.org/articulo.oa?id=46434438 |
| Etiketak: |
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