Characterization of SnTe Films Grown by Molecular Beam Epitaxy
A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxyon (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 °A as determined from x-ray diffractionspectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-r...
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| Publicado no: | Brazilian Journal of Physics |
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| Principais autores: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedade Brasileira de Física
2006
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=46436324 |
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