Characterization of SnTe Films Grown by Molecular Beam Epitaxy

A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxyon (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 °A as determined from x-ray diffractionspectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-r...

Fuld beskrivelse

Na minha lista:
Bibliografiske detaljer
Udgivet i:Brazilian Journal of Physics
Main Authors: U. A. Mengui, E. Abramof, P. H. O. Rappl, A.Y. Ueta
Format: Artigo
Sprog:Inglês
Udgivet: Sociedade Brasileira de Física 2006
Fag:
Física, Astronomía y Matemáticas
SnTe
BaF2 substrates
Molecular beam epitaxy
Online adgang:https://www.redalyc.org/articulo.oa?id=46436324
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker