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Characterization of SnTe Films Grown by Molecular Beam Epitaxy

A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxyon (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 °A as determined from x-ray diffractionspectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-r...

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Bibliografske podrobnosti
izdano v:Brazilian Journal of Physics
Principais autores: U. A. Mengui, E. Abramof, P. H. O. Rappl, A.Y. Ueta
Format: Artigo
Jezik:Inglês
Izdano: Sociedade Brasileira de Física 2006
Teme:
Online dostop:https://www.redalyc.org/articulo.oa?id=46436324
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