Characterization of PbTe p ¡ n+ Junction Grown by Molecular Beam Epitaxy
In this work we investigate the electrical properties of PbTe p ¡ n+ junction. Mesa diodes were fabricatedfrom p ¡ n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis ofthe current versus voltage characteristic measured at 80K, the incremental differential resi...
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| Publicado en: | Brazilian Journal of Physics |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedade Brasileira de Física
2004
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46434428 |
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