Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices
The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within themultiband k¢p and envelope function approximations. The spin-dependent transmission probability for electronsacross the structure is obtained using transfer matrices and the low bias conductance...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2004
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46434425 |
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