Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schrödinger and Poisson equations self-cons...
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| Pubblicato in: | Brazilian Journal of Physics |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedade Brasileira de Física
2009
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=46413556023 |
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