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Highly Ordered Amorphous Silicon-Carbon Alloys Obtained by RF PECVD
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures,...
שמור ב:
| הוצא לאור ב: | Brazilian Journal of Physics |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Sociedade Brasileira de Física
2000
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| נושאים: | |
| גישה מקוונת: | https://www.redalyc.org/articulo.oa?id=46413500009 |
| תגים: |
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