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Highly Ordered Amorphous Silicon-Carbon Alloys Obtained by RF PECVD

We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures,...

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Xehetasun bibliografikoak
Argitaratua izan da:Brazilian Journal of Physics
Egile Nagusiak: I. Pereyra, C. A. Villacorta, M.N.P. Carreño, R.J. Prado, M.C.A. Fantini
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Sociedade Brasileira de Física 2000
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Sarrera elektronikoa:https://www.redalyc.org/articulo.oa?id=46413500009
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