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Highly Ordered Amorphous Silicon-Carbon Alloys Obtained by RF PECVD
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures,...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Brazilian Journal of Physics |
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| Prif Awduron: | , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Sociedade Brasileira de Física
2000
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=46413500009 |
| Tagiau: |
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