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Selective Doping in Silicon Carbide Power Devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. T...
Shranjeno v:
| izdano v: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2021
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8307042/ https://ncbi.nlm.nih.gov/pubmed/34300845 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14143923 |
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