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Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...
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| Publicado no: | Nanomaterials (Basel) |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7221570/ https://ncbi.nlm.nih.gov/pubmed/32331313 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10040803 |
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