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Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...
Tallennettuna:
| Julkaisussa: | Nanomaterials (Basel) |
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| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2020
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7221570/ https://ncbi.nlm.nih.gov/pubmed/32331313 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10040803 |
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