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Selective Doping in Silicon Carbide Power Devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. T...
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| Pubblicato in: | Materials (Basel) |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8307042/ https://ncbi.nlm.nih.gov/pubmed/34300845 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14143923 |
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