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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MO...
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| Publié dans: | Micromachines (Basel) |
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| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2021
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8306660/ https://ncbi.nlm.nih.gov/pubmed/34198997 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12070756 |
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