Carregant...
Investigation of 1200 V SiC MOSFETs’ Surge Reliability
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...
Guardat en:
| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6680762/ https://ncbi.nlm.nih.gov/pubmed/31323884 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10070485 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|