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Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To gu...
Tallennettuna:
| Julkaisussa: | Micromachines (Basel) |
|---|---|
| Päätekijät: | , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6562836/ https://ncbi.nlm.nih.gov/pubmed/31083371 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10050314 |
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