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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MO...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8306660/ https://ncbi.nlm.nih.gov/pubmed/34198997 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12070756 |
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