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Investigation of 1200 V SiC MOSFETs’ Surge Reliability
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6680762/ https://ncbi.nlm.nih.gov/pubmed/31323884 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10070485 |
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