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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold volta...
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| Vydáno v: | Micromachines (Basel) |
|---|---|
| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8234809/ https://ncbi.nlm.nih.gov/pubmed/34205287 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060721 |
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