APA引文

Dub, M., Sai, P., Sakowicz, M., Janicki, L., But, D. B., Prystawko, P., . . . Rumyantsev, S. (2021). Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics. Micromachines (Basel).

Citação norma Chicago

Dub, Maksym, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, and Sergey Rumyantsev. "Double-Quantum-Well AlGaN/GaN Field Effect Transistors With Top and Back Gates: Electrical and Noise Characteristics." Micromachines (Basel) 2021.

MLA引文

Dub, Maksym, et al. "Double-Quantum-Well AlGaN/GaN Field Effect Transistors With Top and Back Gates: Electrical and Noise Characteristics." Micromachines (Basel) 2021.