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The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD
The influence of N incorporation on the optical properties of Si-rich a-SiC(x) films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL)....
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| Vydáno v: | Micromachines (Basel) |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8228809/ https://ncbi.nlm.nih.gov/pubmed/34070734 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060637 |
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