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Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and s...
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| Publicado en: | Nanomaterials (Basel) |
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| Main Authors: | , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2021
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8067383/ https://ncbi.nlm.nih.gov/pubmed/33917367 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11040928 |
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