A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon

In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average a...

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Udgivet i:Nanoscale Res Lett
Main Authors: Mi, Guanyu, Lv, Jian, Que, Longcheng, Zhang, Yi, Zhou, Yun, Liu, Zhongyuan
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2021
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7914334/
https://ncbi.nlm.nih.gov/pubmed/33638762
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-021-03499-x
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