Chargement en cours...
Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...
Enregistré dans:
| Publié dans: | Nanoscale Res Lett |
|---|---|
| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer US
2018
|
| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6179974/ https://ncbi.nlm.nih.gov/pubmed/30306413 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2741-9 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|