Načítá se...
Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...
Uloženo v:
| Vydáno v: | Nanoscale Res Lett |
|---|---|
| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2018
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6179974/ https://ncbi.nlm.nih.gov/pubmed/30306413 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2741-9 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|