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Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6179974/ https://ncbi.nlm.nih.gov/pubmed/30306413 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2741-9 |
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