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A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon
In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average a...
Gorde:
| Argitaratua izan da: | Nanoscale Res Lett |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer US
2021
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7914334/ https://ncbi.nlm.nih.gov/pubmed/33638762 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-021-03499-x |
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