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Benchmarking monolayer MoS(2) and WS(2) field-effect transistors
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS(2) and WS(2) films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS(2) FETs and 160 WS(2) FETs with channel lengths ranging from 5 μm down to 100 nm. We use s...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7846590/ https://ncbi.nlm.nih.gov/pubmed/33514710 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-20732-w |
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