Carregant...
Benchmarking monolayer MoS(2) and WS(2) field-effect transistors
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS(2) and WS(2) films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS(2) FETs and 160 WS(2) FETs with channel lengths ranging from 5 μm down to 100 nm. We use s...
Guardat en:
| Publicat a: | Nat Commun |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2021
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7846590/ https://ncbi.nlm.nih.gov/pubmed/33514710 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-20732-w |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|