Benchmarking monolayer MoS(2) and WS(2) field-effect transistors

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS(2) and WS(2) films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS(2) FETs and 160 WS(2) FETs with channel lengths ranging from 5 μm down to 100 nm. We use s...

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Detaylı Bibliyografya
Yayımlandı:Nat Commun
Asıl Yazarlar: Sebastian, Amritanand, Pendurthi, Rahul, Choudhury, Tanushree H., Redwing, Joan M., Das, Saptarshi
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group UK 2021
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC7846590/
https://ncbi.nlm.nih.gov/pubmed/33514710
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-20732-w
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