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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2021
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7828268/ https://ncbi.nlm.nih.gov/pubmed/33450822 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14020354 |
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