MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications
Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device. These layers provide electron injection into the active region and at the same time act as optical waveguides, allowing efficient stee...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sivas Cumhuriyet Üniversitesi
2025-06-01
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| coleção: | Cumhuriyet Science Journal |
| Assuntos: | |
| Acesso em linha: | https://dergipark.org.tr/en/download/article-file/4757527 |
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