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Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Czernecki, Robert, Moszak, Karolina, Olszewski, Wojciech, Grzanka, Ewa, Leszczynski, Mike
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6829259/
https://ncbi.nlm.nih.gov/pubmed/31623121
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203375
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