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Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III...
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| Pubblicato in: | Materials (Basel) |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829259/ https://ncbi.nlm.nih.gov/pubmed/31623121 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203375 |
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