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Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III...

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Bibliografske podrobnosti
izdano v:Materials (Basel)
Main Authors: Czernecki, Robert, Moszak, Karolina, Olszewski, Wojciech, Grzanka, Ewa, Leszczynski, Mike
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2019
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC6829259/
https://ncbi.nlm.nih.gov/pubmed/31623121
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203375
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