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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping eff...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7766672/ https://ncbi.nlm.nih.gov/pubmed/33419371 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11121131 |
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