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Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...
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| Publicado no: | Micromachines (Basel) |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8067609/ https://ncbi.nlm.nih.gov/pubmed/33917633 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12040407 |
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