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Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM

A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). A poly-Si 1T-DRAM cell operates as a memory by u...

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Detalhes bibliográficos
Publicado no:Micromachines (Basel)
Main Authors: Yoo, Songyi, Sun, Wookyung, Shin, Hyungsoon
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7690446/
https://ncbi.nlm.nih.gov/pubmed/33105643
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11110952
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