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Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implemen...
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| Publicado no: | Micromachines (Basel) |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074760/ https://ncbi.nlm.nih.gov/pubmed/32102235 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020228 |
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