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Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond
We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affe...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7599814/ https://ncbi.nlm.nih.gov/pubmed/33053712 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13204510 |
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