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Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System
The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relat...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6926801/ https://ncbi.nlm.nih.gov/pubmed/31795291 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12233953 |
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