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Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and dope...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6070895/ https://ncbi.nlm.nih.gov/pubmed/29966282 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8070480 |
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