Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affe...

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Detaylı Bibliyografya
Yayımlandı:Materials (Basel)
Asıl Yazarlar: Han, Xiaotong, Duan, Peng, Peng, Yan, Wang, Xiwei, Xie, Xuejian, Yu, Jinying, Hu, Xiufei, Wang, Dufu, Hu, Xiaobo, Xu, Xiangang
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2020
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC7599814/
https://ncbi.nlm.nih.gov/pubmed/33053712
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13204510
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