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Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B(3)N(3)H(6)) and electrons. Electron-stimulated desorption (ESD) of hydrogen surface species and the corresponding creation of...
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| Publicat a: | J Phys Chem C Nanomater Interfaces |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7580015/ https://ncbi.nlm.nih.gov/pubmed/33101567 |
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