Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim
Format: Artigo
Langue:Inglês
Publié: MDPI AG 2016-12-01
Collection:Materials
Sujets:
review
atomic layer deposition
plasma-enhanced ALD (PEALD)
silicon nitride
thermal ALD
surface reactions
Accès en ligne:http://www.mdpi.com/1996-1944/9/12/1007
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