Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N<sub>2</sub>H<sub>4</sub>) as a metal precursor and nitrogen source, respect...

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Main Authors: Yong Chan Jung, Su Min Hwang, Dan N. Le, Aswin L. N. Kondusamy, Jaidah Mohan, Sang Woo Kim, Jin Hyun Kim, Antonio T. Lucero, Arul Ravichandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2020-07-01
Colecção:Materials
Assuntos:
atomic layer deposition (ALD)
aluminum nitride
hydrazine
trimethyl aluminum (TMA)
Acesso em linha:https://www.mdpi.com/1996-1944/13/15/3387
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