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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets...
Uloženo v:
| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7560755/ https://ncbi.nlm.nih.gov/pubmed/33057086 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-73977-2 |
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