APA način citiranja

Besendörfer, S., Meissner, E., Medjdoub, F., Derluyn, J., Friedrich, J., & Erlbacher, T. (2020). The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Sci Rep.

Čikaški stil citiranja

Besendörfer, Sven, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, i Tobias Erlbacher. "The Impact of Dislocations On AlGaN/GaN Schottky Diodes and On Gate Failure of High Electron Mobility Transistors." Sci Rep 2020.

MLA način citiranja

Besendörfer, Sven, et al. "The Impact of Dislocations On AlGaN/GaN Schottky Diodes and On Gate Failure of High Electron Mobility Transistors." Sci Rep 2020.