Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1...

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Pubblicato in:J Electrochem Soc
Autori principali: Menk, L.A., Josell, D., Moffat, T. P., Baca, E., Blain, M. G., Smith, A., Dominguez, J., McClain, J., Yeh, P. D., Hollowell, A. E.
Natura: Artigo
Lingua:Inglês
Pubblicazione: 2018
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Article
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC7542679/
https://ncbi.nlm.nih.gov/pubmed/33041354
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