A carregar...
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1...
Na minha lista:
| Publicado no: | J Electrochem Soc |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7542679/ https://ncbi.nlm.nih.gov/pubmed/33041354 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|