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The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the re...
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| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2020
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7483413/ https://ncbi.nlm.nih.gov/pubmed/32913186 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-71826-w |
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